MAGIC NAND within NOR gate

In-memory computing based on memristor has attracted significant interest for breaking the von Neumann bottleneck and developing high-efficient computing systems. Memristor-based logic gate is one of the most important part to achieve our goals. Recently, there are many methods which have been presented to achieve Boolean functions. Such as material implication (IMPLY) and memristor-aided logic (MAGIC). MAGIC NAND gate can be used as a standalone logic which is not placed within a crossbar array. However, it's unavoidable to describe it within a crossbar array in order to design more circuits which can achieve more functions. So we use a 4*3 array which consists of memristors and transistors (1T1R) to simulate MAGIC NAND gate within a crossbar array. And we deduce the mathematical relationship between the applied voltage and the threshold voltage. Furthermore, we have verified NAND logic within the array and implemented vector NAND computation.