14nm CMOS下4.1 pJ/b 25.6 Gb/s 4-PAM降态滑块Viterbi探测器

Hazar Yueksel, M. Braendli, A. Burg, G. Cherubini, R. Cideciyan, P. Francese, S. Furrer, M. Kossel, L. Kull, D. Luu, C. Menolfi, T. Morf, T. Toifl
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引用次数: 6

摘要

描述了一种数字四电平脉冲幅度调制降态滑块Viterbi检测器(VD)的实现,该检测器具有两个子状态和两个嵌入的每个幸存者决策反馈分岔,工作速率为调制速率的八分之一。VD在14nm CMOS实验芯片上实现,在模拟的时间色散信道上以25.6 Gb/s的速度恢复数据。在0.7V的电源下,VD和测试电路的功耗为105mW,实现了4.1 pJ/b的总能量效率。在0.8V的电源下,数据速率达到30.4 Gb/s,能量效率为5.3 pJ/b。VD的面积为0.507×0.717mm2。实验结果表明,采用(215-1)位伪随机二进制序列,系统性能良好。还测量了块初始化时同步长度对误码率的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 4.1 pJ/b 25.6 Gb/s 4-PAM reduced-state sliding-block Viterbi detector in 14 nm CMOS
The implementation of a digital four-level pulse-amplitude-modulation reduced-state sliding-block Viterbi detector (VD) with two substates and two embedded per-survivor decision-feedback taps operating at one-eighth of the modulation rate is described. Implemented in an experimental chip fabricated in 14nm CMOS, the VD is designed to recover data at 25.6 Gb/s over an emulated time-dispersive channel. The power consumption of the VD together with the test circuitry is 105mW at a supply of 0.7V, achieving an overall energy efficiency of 4.1 pJ/b. At a supply of 0.8V, a data rate of 30.4 Gb/s is achieved with an energy efficiency of 5.3 pJ/b. The VD occupies an area of 0.507×0.717mm2. Experimental results showing system performance are obtained using a (215-1)-bit pseudo-random binary sequence. The impact on the bit error rate of the synchronization length for block initialization is also measured.
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