超薄Hf1-xZrxO2栅极堆栈的铁电特性及1T存储操作应用

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI:10.1109/EDTM.2018.8421475

M. H. Lee, C. Kuo, C.-H. Tang, H. Chen, C.-Y. Liao, R. Hong, S. Gu, Y.-C. Chou, Z. Wang, Syuan-Ye Chen, P. Chen, M. Liao, K.-S. Li

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引用次数: 1

摘要

研究了超薄Zr掺杂在HfO2中作为栅堆的典型特性。外推10年后，P/E保持的1T记忆窗口为0.67V (5nm)和1.52V (7nm)， P/E=±4.8V，读取续航时间>109次。超薄FE-HZO有望成为1T存储器应用的指导原则。

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Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >10⁹ cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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