高性能低功耗6.0 A HBT器件和电路

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553151

C. Monier, A. Cavus, R. Sandhu, D. Li, P. Nam, B. Chan, A. Oshiro, D. Matheson, A. Gutierrez-Aitken

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引用次数: 2

摘要

在双极逻辑电路中，在基层中使用具有高铟含量(80 < x < 100)材料的窄带隙Inx Ga1-xAs系统将主要影响器件的导通电压VBE，与传统的III-V技术相比，可以降低一半。这将直接转化为数字应用中的较低电源电压。本文讨论了基于晶格参数材料体系的双极电路器件技术

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High performance low power 6.0 A HBT devices and circuits

In bipolar logic circuits, the use of a narrow band gap Inx Ga1-xAs system with high indium content (80 < x < 100) materials in the base layer will primarily impact the device turn-on voltage VBE that could be reduced by half compared to conventional III-V technologies. This will directly translate to lower supply voltage in digital applications. This paper discusses device technology for bipolar circuit applications based on material systems with lattice parameter towards that of InAs

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63rd Device Research Conference Digest, 2005. DRC '05.

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