Amorphous InGaZnO logic gates for transparent electronics

InGaZnO is an amorphous oxide semiconductor with electron mobility an order of magnitude higher than that of amorphous silicon or organic semiconductors. The ability to control carrier concentration, the wide band gap and deposition at room temperature make it an excellent candidate for transparent electronic systems on glass or plastics. Thus far, most reports have focused on the performance of the performance of single discrete devices [1],[2] or simple ring oscillator circuits operating at 2 MHz [3]. While a OR gate has recently been published [4] operating at10 Hz, in general the basic building blocks for transparent digital logic has not been investigated. In this paper we present, transparent logic showing good performance from inverters, NAND and NOR gates, all deposited at room temperature. The significance of these results is that construction of these basic digital logic building blocks with high gain and fast response demonstrate the viability for amorphous oxide digital logic to be utilized in transparent, and flexible electronic systems.