一种90纳米CMOS低相位变化的28 ghz可变增益放大器

C. Kuo, Ting Chou
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引用次数: 2

摘要

设计了一种采用90纳米CMOS技术的28 GHz可变增益放大器。该电路提供17.7 dB的最大增益,通过电流转向方法可调范围为38 dB。在本设计中,通过引入变压器耦合来抵消电容漏电流,使电压增益的相位变化最小化。变容器提供频率调谐的能力。因此,在28ghz增益调谐范围内,测量到的相位变化小于$7^{\circ}$。该电路在1.2 V的供电电压下消耗6.9 mA的直流电流,包括二级级联码放大器的输出缓冲器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28-GHz Variable Gain Amplifier with Low Phase Variation in 90-nm CMOS
A 28 GHz variable gain amplifier is designed in a 90 nm CMOS technology. The circuit provides a maximum gain of 17.7 dB with a tunable range of 38 dB by the current-steering method. In this design, the phase variation of the voltage gain is minimized by introducing transformer coupling to cancel capacitive leakage current. A varactor provides the capability of frequency tuning. Consequently, the measured phase variation is less than $7^{\circ}$ over the gain tuning range at 28 GHz. The circuit consumes a dc current of 6.9 mA under the supply voltage of 1.2 V, including the output buffer of a two-stage cascode amplifier.
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