H. Yang, L. P. Shi, H. K. Lee, R. Zhao, M.H. Li, J.M. Li, K. G. Lim, T. Chong
{"title":"基于n掺杂Sb70Te30类超晶格结构的多层横向相变存储器","authors":"H. Yang, L. P. Shi, H. K. Lee, R. Zhao, M.H. Li, J.M. Li, K. G. Lim, T. Chong","doi":"10.1109/IMW.2010.5488400","DOIUrl":null,"url":null,"abstract":"A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnS-SiO2 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Multi-level lateral phase change memory based on N-doped Sb70Te30 super-lattice like structure\",\"authors\":\"H. Yang, L. P. Shi, H. K. Lee, R. Zhao, M.H. Li, J.M. Li, K. G. Lim, T. Chong\",\"doi\":\"10.1109/IMW.2010.5488400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnS-SiO2 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.\",\"PeriodicalId\":149628,\"journal\":{\"name\":\"2010 IEEE International Memory Workshop\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2010.5488400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-level lateral phase change memory based on N-doped Sb70Te30 super-lattice like structure
A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnS-SiO2 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.
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