不同入射角下基于COTS 28nm sram FPGA的热中子诱导seu

J. Fabero, Golnaz Korkian, F. J. Franco, H. Mecha, M. Letiche, J. A. Clemente
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引用次数: 1

摘要

本文提出了一种基于28纳米商用现货(COTS) sram的FPGA的SEU对热中子辐射敏感性的实验研究。实验结果显示单事件干扰(seu)在配置RAM (CRAM)单元,触发器(FFs)和块RAM (BRAMs)上提供和讨论。还分析了多个事件(各种多重)的形状,以及它们与粒子束对设备表面入射角的依赖关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Neutron-induced SEUs on a COTS 28-nm SRAM-based FPGA under Different Incident Angles
This paper presents an experimental study of the SEU susceptibility against thermal neutron radiation of a 28-nm bulk Commercial-Off-The-Shelf (COTS) SRAM-based FPGA. Experimental results showing Single Event Upsets (SEUs) on configuration RAM (CRAM) cells, Flip-Flops (FFs), and Block RAMs (BRAMs) are provided and discussed. Shapes of multiple events (of various multiplicities) are also analyzed, as well as their dependency with the incident angle of the particle beam against the device's surface.
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