超高速ram的机遇与局限

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156696

W. Herndon

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引用次数: 0

摘要

几种设计方法和技术已经显示出令人印象深刻的能力，可以生产密度大于1Kb、访问时间小于25ns的sram。小组成员将探讨进一步发展这些技术的机会，并生产≥64Kb的密度和≤5ns的访问时间。要探讨的问题包括合并双极存储器的访问时间以及砷化镓存储器的单元尺寸和经济性。

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Opportunities and limitations in ultra high speed SRAMs

Several design approaches and technologies have shown impressive abilities to produce SRAMs with densities greater than 1Kb and access times less than 25ns. Panelists will examine opportunities to develop further these technologies and produce a density of ≥64Kb and access time of ≤5ns. Issues to be probed include the access time of merged bipolar memories and the cell sizes and economics of GaAs memories.

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1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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