{"title":"预测技术表征,TCAD和紧凑型建模之间的缺失环节","authors":"C. McAndrew","doi":"10.1109/SISPAD.2000.871195","DOIUrl":null,"url":null,"abstract":"Predictive modeling of components in IC manufacturing technologies is an essential part of coupled technology and circuit development. TCAD simulation is often viewed as the best method to generate predictive simulations; however, it has some limitations. Engineering experience, extrapolated technology requirements, and compact models all must be invoked in the provision of predictive circuit level technology data. This paper describes the techniques and information required for effective and efficient engineering predictions of technology capability, including statistical variations, and notes deficiencies (and therefore opportunities) in the TCAD simulations that underlie compact modeling for predictive technology characterization.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Predictive technology characterization, missing links between TCAD and compact modeling\",\"authors\":\"C. McAndrew\",\"doi\":\"10.1109/SISPAD.2000.871195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Predictive modeling of components in IC manufacturing technologies is an essential part of coupled technology and circuit development. TCAD simulation is often viewed as the best method to generate predictive simulations; however, it has some limitations. Engineering experience, extrapolated technology requirements, and compact models all must be invoked in the provision of predictive circuit level technology data. This paper describes the techniques and information required for effective and efficient engineering predictions of technology capability, including statistical variations, and notes deficiencies (and therefore opportunities) in the TCAD simulations that underlie compact modeling for predictive technology characterization.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Predictive technology characterization, missing links between TCAD and compact modeling
Predictive modeling of components in IC manufacturing technologies is an essential part of coupled technology and circuit development. TCAD simulation is often viewed as the best method to generate predictive simulations; however, it has some limitations. Engineering experience, extrapolated technology requirements, and compact models all must be invoked in the provision of predictive circuit level technology data. This paper describes the techniques and information required for effective and efficient engineering predictions of technology capability, including statistical variations, and notes deficiencies (and therefore opportunities) in the TCAD simulations that underlie compact modeling for predictive technology characterization.