一种24 GHz集成SiGe BiCMOS生命体征探测雷达前端

2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC) Pub Date : 2013-10-28 DOI:10.1109/IMOC.2013.6646478

B. S. Jensen, T. Johansen, V. Zhurbenko

{"title":"一种24 GHz集成SiGe BiCMOS生命体征探测雷达前端","authors":"B. S. Jensen, T. Johansen, V. Zhurbenko","doi":"10.1109/IMOC.2013.6646478","DOIUrl":null,"url":null,"abstract":"In this paper a 24 GHz integrated front-end transceiver for vital signs detection (VSD) radars is described. The heterodyne radar transceiver integrates LO buffering and quadrature splitting circuits, up- and down-conversion SSB mixers and two cascaded receiver LNA's. The chip has been manufactured in a 0.25 μm SiGe:C BiCMOS technology and its size is 1390 × 2690 μm2. The transmitter demonstrates a maximum output power at 24 GHz of approximately -30 dBm with an externally applied LO power of 3 dBm. The receiver demonstrates a peak gain of 13.3 dB at 22.15 GHz with >10 dB return loss. The power consumption of the entire transceiver is approximately 164 mW.","PeriodicalId":395359,"journal":{"name":"2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 24 GHz integrated SiGe BiCMOS vital signs detection radar front-end\",\"authors\":\"B. S. Jensen, T. Johansen, V. Zhurbenko\",\"doi\":\"10.1109/IMOC.2013.6646478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a 24 GHz integrated front-end transceiver for vital signs detection (VSD) radars is described. The heterodyne radar transceiver integrates LO buffering and quadrature splitting circuits, up- and down-conversion SSB mixers and two cascaded receiver LNA's. The chip has been manufactured in a 0.25 μm SiGe:C BiCMOS technology and its size is 1390 × 2690 μm2. The transmitter demonstrates a maximum output power at 24 GHz of approximately -30 dBm with an externally applied LO power of 3 dBm. The receiver demonstrates a peak gain of 13.3 dB at 22.15 GHz with >10 dB return loss. The power consumption of the entire transceiver is approximately 164 mW.\",\"PeriodicalId\":395359,\"journal\":{\"name\":\"2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMOC.2013.6646478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMOC.2013.6646478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了一种用于生命体征探测(VSD)雷达的24 GHz集成前端收发器。外差雷达收发器集成了LO缓冲和正交分裂电路，上下转换SSB混频器和两个级联接收器LNA。该芯片采用0.25 μm SiGe:C BiCMOS工艺制造，尺寸为1390 × 2690 μm2。该发射机在24 GHz时的最大输出功率约为-30 dBm，外部本端功率为3 dBm。该接收机在22.15 GHz时的峰值增益为13.3 dB，回波损耗为bbb10 dB。整个收发器的功耗约为164 mW。

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A 24 GHz integrated SiGe BiCMOS vital signs detection radar front-end

In this paper a 24 GHz integrated front-end transceiver for vital signs detection (VSD) radars is described. The heterodyne radar transceiver integrates LO buffering and quadrature splitting circuits, up- and down-conversion SSB mixers and two cascaded receiver LNA's. The chip has been manufactured in a 0.25 μm SiGe:C BiCMOS technology and its size is 1390 × 2690 μm2. The transmitter demonstrates a maximum output power at 24 GHz of approximately -30 dBm with an externally applied LO power of 3 dBm. The receiver demonstrates a peak gain of 13.3 dB at 22.15 GHz with >10 dB return loss. The power consumption of the entire transceiver is approximately 164 mW.

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2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)

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