A. Urbanowicz, V. V. Talanov, Marianna Pantouvaki, Herbert Struyf, S. Gendt, M. R. Baklanov
{"title":"用近场扫描探针微波显微镜评价等离子体对毛毯和图案低k结构的损伤:等离子体灰分化学的影响","authors":"A. Urbanowicz, V. V. Talanov, Marianna Pantouvaki, Herbert Struyf, S. Gendt, M. R. Baklanov","doi":"10.1109/IITC.2009.5090363","DOIUrl":null,"url":null,"abstract":"The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriK™ technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"11 15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: effect of plasma ash chemistry\",\"authors\":\"A. Urbanowicz, V. V. Talanov, Marianna Pantouvaki, Herbert Struyf, S. Gendt, M. R. Baklanov\",\"doi\":\"10.1109/IITC.2009.5090363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriK™ technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"11 15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: effect of plasma ash chemistry
The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriK™ technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.