FA/ oii表面活性剂作为络合非离子表面活性剂对铜CMP的影响

2021 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2021-03-14 DOI:10.1109/CSTIC52283.2021.9461470

Yinchan Zhang, X. Niu, Jiakai Zhou, Chenghui Yang, Ziyang Hou, Yebo Zhu

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引用次数: 1

摘要

浆料中的表面活性剂可以优化硅片的表面均匀性和表面形貌，实现整体的平面化，因此讨论了FA/O II表面活性剂作为复合非离子表面活性剂在甘氨酸基弱碱性浆料中铜化学机械平面化(CMP)过程中的作用。实验结果表明，与脂肪醇聚氧乙烯醚(JFCE)相比，FA/O - II表面活性剂具有更高的材料去除率(MRR)和更低的晶圆内不均匀性(WIWNU)。结果表明，FA/O II表面活性剂可以降低表面张力，改善抛光表面的均匀性和形貌。分析了FA/ oii表面活性剂的作用机理。

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Effect of FA/O II Surfactant as a Complex Non-Ionic Surfactant on Copper CMP

The surfactant in the slurry can optimize the surface uniformity and surface topography of the wafer to realize the global planarization, so the effect of FA/O II surfactant as a complex non-ionic surfactant in a glycine-based weakly alkaline slurry during the copper chemical mechanical planarization (CMP) process was discussed. The experimental results verified FA/O II surfactant can achieve a higher material removal rate (MRR) and lower within-wafer non-uniformity (WIWNU) than fatty alcohol polyoxyethylene ether (JFCE). A series of measurements confirmed that FA/O II surfactant can reduce surface tension and improve the uniformity and the topography of polished surfaces. The action mechanism of FA/O II surfactant was also analyzed.

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2021 China Semiconductor Technology International Conference (CSTIC)

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