M. Mizuno, K. Furuta, S. Narita, H. Abiko, I. Sakai, M. Yamashina
{"title":"弹性vt CMOS电路用于多个片上电源控制","authors":"M. Mizuno, K. Furuta, S. Narita, H. Abiko, I. Sakai, M. Yamashina","doi":"10.1109/ISSCC.1996.488627","DOIUrl":null,"url":null,"abstract":"The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Elastic-Vt CMOS circuits for multiple on-chip power control\",\"authors\":\"M. Mizuno, K. Furuta, S. Narita, H. Abiko, I. Sakai, M. Yamashina\",\"doi\":\"10.1109/ISSCC.1996.488627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.\",\"PeriodicalId\":162539,\"journal\":{\"name\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-02-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1996.488627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Elastic-Vt CMOS circuits for multiple on-chip power control
The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.