{"title":"用于FMCW雷达的77 ghz有源毫米波反射器","authors":"M. S. Dadash, J. Hasch, S. Voinigescu","doi":"10.1109/RFIC.2017.7969080","DOIUrl":null,"url":null,"abstract":"An 18-mW active millimeter-wave reflector fabricated in 45-nm SOI CMOS technology exhibits a peak gain of 20 dB at 77 GHz, a 3-dB bandwidth of 5 GHz from 75.5 to 80.5 GHz, and a 50-Ω noise figure of 7.5–8.5 dB over the same frequency band. It consists of an LNA, a BPSK modulator and two variable gain output stages each driving a separate transmit antenna. The chip occupies 570µm×880µm and is flip-chip mounted on a 7mm×7mm flexible interposer with two transmit and one receive antenna.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 77-GHz active millimeter-wave reflector for FMCW radar\",\"authors\":\"M. S. Dadash, J. Hasch, S. Voinigescu\",\"doi\":\"10.1109/RFIC.2017.7969080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An 18-mW active millimeter-wave reflector fabricated in 45-nm SOI CMOS technology exhibits a peak gain of 20 dB at 77 GHz, a 3-dB bandwidth of 5 GHz from 75.5 to 80.5 GHz, and a 50-Ω noise figure of 7.5–8.5 dB over the same frequency band. It consists of an LNA, a BPSK modulator and two variable gain output stages each driving a separate transmit antenna. The chip occupies 570µm×880µm and is flip-chip mounted on a 7mm×7mm flexible interposer with two transmit and one receive antenna.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 77-GHz active millimeter-wave reflector for FMCW radar
An 18-mW active millimeter-wave reflector fabricated in 45-nm SOI CMOS technology exhibits a peak gain of 20 dB at 77 GHz, a 3-dB bandwidth of 5 GHz from 75.5 to 80.5 GHz, and a 50-Ω noise figure of 7.5–8.5 dB over the same frequency band. It consists of an LNA, a BPSK modulator and two variable gain output stages each driving a separate transmit antenna. The chip occupies 570µm×880µm and is flip-chip mounted on a 7mm×7mm flexible interposer with two transmit and one receive antenna.