通过纳米探针分析，对栅源或漏极短的FA病例进行了深入的描述

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898166

Li-Lung Lai, Oscar Zhang, Ling Zhu, Feng Qian, Mason Sun

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引用次数: 0

摘要

纳米探针分析已成为现代半导体FA实验室的标准分析技术。在本文中，我们描述了使用纳米探测来研究门到源或门到漏短路的情况，并通过物理分析跟踪纳米探测产生的数据。本文讨论了电学细节和物理机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-depth description for the FA case with Gate-to-Source or Drain short by nanoprobing analysis

Nanoprobing analysis has become standard analytical technique in the modern semiconductor FA lab. In this paper, we describe the use of nanoprobing to investigate cases of Gate-to-Source or Gate-to-Drain shorts and follow up the data generated by nanoprobing with physical analysis. The paper provide discussion of the electrical details and the physical mechanisms.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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