{"title":"性价比高的高性能单片x波段低噪声放大器","authors":"D.C. Wang, R. G. Pauley, S. Wang, L.C.T. Liu","doi":"10.1109/MCS.1986.1114480","DOIUrl":null,"url":null,"abstract":"A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cost-Effective High Performance Monolithic X-Band Low Noise Amplifiers\",\"authors\":\"D.C. Wang, R. G. Pauley, S. Wang, L.C.T. Liu\",\"doi\":\"10.1109/MCS.1986.1114480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cost-Effective High Performance Monolithic X-Band Low Noise Amplifiers
A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.
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