倏逝半导体波导光隔离器的设计

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297235

H. Shimizu, T. Mori, S. Goto

{"title":"倏逝半导体波导光隔离器的设计","authors":"H. Shimizu, T. Mori, S. Goto","doi":"10.1109/NUSOD.2009.5297235","DOIUrl":null,"url":null,"abstract":"We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of evanescent semiconductor waveguide optical isolators\",\"authors\":\"H. Shimizu, T. Mori, S. Goto\",\"doi\":\"10.1109/NUSOD.2009.5297235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.\",\"PeriodicalId\":120796,\"journal\":{\"name\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2009.5297235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2009.5297235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们设计了倏逝波导半导体光隔离器，实现了8.7dB/mm的隔离和较低的正向透明电流。它们由上InGaAsP波导层和在有源层上的侧壁处的铁层组成。

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Design of evanescent semiconductor waveguide optical isolators

We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.

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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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