凹槽栅结场效应晶体管

B. Baliga
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引用次数: 2

摘要

描述了一种用于垂直沟道结栅场效应晶体管的凹槽栅结构。该结构可以使用自对准源栅工艺制造,仅使用两个屏蔽步骤来制造器件有源区域。用这种结构制造的器件表现出高达400伏的阻塞电压,阻塞增益范围从3到12,取决于凹槽深度。这些器件的单位功率增益截止频率在500mhz以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recessed gate junction field effect transistors
A recessed gate structure is described for vertical channel junction gate field effect transistors. This structure can be fabricated using a self-aligned source-gate process with the use of only two masking steps for the fabrication of the device active region. Devices fabricated with this structure exhibit blocking voltages of upto 400 volts with blocking gains ranging from 3 to 12 depending upon the groove depth. These devices have a unity power gain cut-off frequency above 500 MHz.
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