具有> 50% PAE的56W SiC MESFET晶体管，用于l波段应用

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487974

B. Luo, P. Chen, A. Higgins, H. Finlay, K. Boutros, B. Pierce, A. Jones, D. Griffey, J. Kolosick

{"title":"具有> 50% PAE的56W SiC MESFET晶体管，用于l波段应用","authors":"B. Luo, P. Chen, A. Higgins, H. Finlay, K. Boutros, B. Pierce, A. Jones, D. Griffey, J. Kolosick","doi":"10.1109/ISPSD.2005.1487974","DOIUrl":null,"url":null,"abstract":"Packaged 30mm SiC MESFET transistors were demonstrated with peak power density of 1.9W/mm and power-added-efficiency (PAE) of 53%. The target application of these devices is L-band communication. Discrete devices with gate dimension of 2 /spl times/ 400 /spl mu/m show a saturation current density of 320mA/mm and an extrinsic transconductance of 25mS/mm. The cut-off and maximum oscillation frequency of these devices was 12GHz and 17GHz, respectively. Large periphery devices with 10W CW output power rating exhibit stable electrical performance over a period of 1100hrs, with less than /spl plusmn/10% drift in drain-source current under continuous DC stress.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"56W SiC MESFET transistors with > 50% PAE for L-band applications\",\"authors\":\"B. Luo, P. Chen, A. Higgins, H. Finlay, K. Boutros, B. Pierce, A. Jones, D. Griffey, J. Kolosick\",\"doi\":\"10.1109/ISPSD.2005.1487974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Packaged 30mm SiC MESFET transistors were demonstrated with peak power density of 1.9W/mm and power-added-efficiency (PAE) of 53%. The target application of these devices is L-band communication. Discrete devices with gate dimension of 2 /spl times/ 400 /spl mu/m show a saturation current density of 320mA/mm and an extrinsic transconductance of 25mS/mm. The cut-off and maximum oscillation frequency of these devices was 12GHz and 17GHz, respectively. Large periphery devices with 10W CW output power rating exhibit stable electrical performance over a period of 1100hrs, with less than /spl plusmn/10% drift in drain-source current under continuous DC stress.\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1487974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

封装的30mm SiC MESFET晶体管峰值功率密度为1.9W/mm，功率附加效率(PAE)为53%。这些器件的目标应用是l波段通信。栅极尺寸为2 /spl倍/ 400 /spl mu/m的分立器件的饱和电流密度为320mA/mm，外在跨导为25mS/mm。这些器件的截止频率和最大振荡频率分别为12GHz和17GHz。具有10W连续输出额定功率的大型外围器件在1100小时内表现出稳定的电气性能，在连续直流应力下漏源电流的漂移小于/spl plusmn/10%。

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56W SiC MESFET transistors with > 50% PAE for L-band applications

Packaged 30mm SiC MESFET transistors were demonstrated with peak power density of 1.9W/mm and power-added-efficiency (PAE) of 53%. The target application of these devices is L-band communication. Discrete devices with gate dimension of 2 /spl times/ 400 /spl mu/m show a saturation current density of 320mA/mm and an extrinsic transconductance of 25mS/mm. The cut-off and maximum oscillation frequency of these devices was 12GHz and 17GHz, respectively. Large periphery devices with 10W CW output power rating exhibit stable electrical performance over a period of 1100hrs, with less than /spl plusmn/10% drift in drain-source current under continuous DC stress.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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