基于多孔硅多层结构的光电表征化学传感器检测有机溶剂

K. Wu, Chong-Wei Li
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引用次数: 0

摘要

在阳极氧化过程中,利用周期性变化的蚀刻电流密度对硅片进行电化学蚀刻,制备了多孔硅多层结构。设计了基于psml的垂直模式和平面模式电极作为化学传感器,利用器件的光电特性来利用传感参数。在不同的偏置配置下,所开发的器件对特定化学试剂的响应表现出不同的光响应特性,对应于单个化学试剂的折射率。所提出的基于psml的器件为光电多参数化学传感器的发展提供了前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Detection of organic solvents by optoelectronic characterization of chemical sensors based on porous silicon multilayered structures
Porous silicon multilayered (PSML) structures had been produced by electrochemical-etching of silicon wafers using periodically varied etching current density in an anodization process. PSML-based devices designed with vertical-mode and planar-mode electrodes were fabricated to serve as chemical sensors that applied optoelectronic properties of devices for use of the sensing parameters. Under different biasing configurations, the developed devices responding to specific chemical agents exhibited distinct photoresponse characteristics, corresponding to the refractive index of an individual chemical agent. The proposed PSML-based devices are promising for development of optoelectronically multi-parametric chemical sensors.
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