基于统计模拟的DSM过程变异性分析及其对设计方法的启示

Srinivasa R. Stg, J. Srivatsava, Narahari Tondamuthuru R
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引用次数: 5

摘要

DSM中集成电路的可制造性直接取决于电路设计过程中对制造变化的考虑程度。本文通过SPICE模拟和分析,回顾了DSM中各种工艺变化的影响,特别是90 nm, 65 nm和45 nm三代工艺的系统和随机变化,以观察取决于变化敏感性的降率因素。很少有单独的标准细胞被研究,作为这个练习的一部分,看看变化对它们延迟的影响。在45纳米及以下的总变化中,随机变化正成为重要的一部分。结果表明,在未来的设计中,有必要进行选择性、基于位置和变化感知分析(SLVA)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process Variability Analysis in DSM Through Statistical Simulations and its Implications to Design Methodologies
Integrated circuit manufacturability in DSM is directly dependent on how well the manufacturing variations are accounted for during the design of circuits. This paper reviews the effect of various process variations in DSM especially systematic and random variations in three process generations 90 nm, 65 nm & 45 nm by doing SPICE simulation and analysis to look at the derating factors depending on the sensitivity to variations. Few individual standard cells are studied as apart of this exercise to see the effect of variation on their delays. Random variations are becoming a significant portion of the overall variations at 45 nm and below. The results suggests the need for selective, location based and variation aware analysis (SLVA) for the designs going forward.
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