{"title":"近似无限动态行为的DRAM单元缺陷","authors":"Z. Al-Ars, A. V. Goor","doi":"10.1109/VTS.2002.1011171","DOIUrl":null,"url":null,"abstract":"Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approximated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.","PeriodicalId":237007,"journal":{"name":"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Approximating infinite dynamic behavior for DRAM cell defects\",\"authors\":\"Z. Al-Ars, A. V. Goor\",\"doi\":\"10.1109/VTS.2002.1011171\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approximated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.\",\"PeriodicalId\":237007,\"journal\":{\"name\":\"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2002.1011171\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 20th IEEE VLSI Test Symposium (VTS 2002)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2002.1011171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Approximating infinite dynamic behavior for DRAM cell defects
Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approximated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.
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