基于OBIRCH分析的短路故障定位创新方法

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984755

Ooi Yong Khai, Jack Ng Yi Jie

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引用次数: 1

摘要

与光束感应电阻变化(OBIRCH)相比，锁定热成像(LIT)是一种常用的故障隔离技术，用于对微电子器件中的参数性短故障进行故障隔离。这是因为OBIRCH技术对直接硬短路参数失效的敏感性大大降低。本文提出了一种简单、创新、有效的方法，在硬短故障OBIRCH分析中增加阻力方差，以提高故障隔离成功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Innovative Methodology for Short Circuit Failure Localization by OBIRCH Analysis

Lock-in thermography (LIT) is a commonly used FA technique to perform fault isolation for parametric short failures in microelectronic devices as compared with Optical Beam Induced Resistance Change (OBIRCH). This is because the OBIRCH technique becomes significantly less sensitive for direct hard short circuit parametric failure. This paper presents a simple yet innovative and effective methodology to increase resistance variances during OBIRCH analysis in hard short failures to improve the fault isolation success rate.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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