异质结光电晶体管的数值分析

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785965

J. Chengzhou, Liao Huailin, Li Guohui

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引用次数: 0

摘要

对一种带保护调制电极的穿孔型AlGaAs-GaAs异质结光电晶体管进行了数值分析。认为增广漂移扩散模型是描述该装置的合适模型，并采用连续线超松弛法求解了耦合方程。系统地计算了载流子和电势的分布、非平衡载流子的输运和频率特性。提出了初步结果并进行了简要讨论。

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A numerical analysis for heterojunction phototransistor

A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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