130,65和40nm CMOS批量制造的sram的高空和地下实时SER测试

J. Autran, D. Munteanu, S. Sauze, G. Gasiot, P. Roche
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引用次数: 4

摘要

软误差率(SER)的实时(寿命)测试是一种实验可靠性技术,用于确定给定组件、电路或系统的软误差灵敏度,该技术通过对一组受自然辐射和在标称条件下运行的设备进行监测。我们在这里展示了2006年以来在海拔高度的欧洲SEE测试平台(ASTEP)和Modane地下实验室(LSM)的地下实时测试结果的调查。辐射数据涉及采用CMOS 130、65和40纳米技术制造的三代sram。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm
Real-time (life) testing of the soft-error rate (SER) is an experimental reliability technique to determine the soft error sensitivity of a given component, circuit or system from the monitoring of a population of devices subjected to natural radiation and operating under nominal conditions. We present here a survey of real-time testing results accumulated from 2006 at mountain altitude on the Altitude SEE Test European Platform (ASTEP) and underground at the Underground Laboratory of Modane (LSM). Radiation data concern three generations of SRAMs manufactured in CMOS 130, 65 and 40 nm technologies.
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