H/sup +/辐照反向恢复柔软度和可靠性功率p-i-n二极管无缓冲应用

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003160

P. Cova, R. Menozzi, M. Portesine

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引用次数: 0

摘要

我们描述了质子辐照对快速恢复p-i-n二极管感应关断的影响的耦合实验-数值研究。目标是避免在关断时可能出现的大过电压和杂散振荡，从而危及二极管的可靠性。我们评估了不同的质子辐照曲线，以提取开关速度、恢复柔软度、过电压和杂散振荡阻尼之间的最佳权衡指标。

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H/sup +/ irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications

We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast-recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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