SOI技术主流化

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1900-01-01 DOI:10.1109/SOI.1999.819828

Ghavam G. Shahidi, A. Ajmera, Fariborz Assaderaghi, R. Bolam, Andres Bryant, M. Coffey, H. Hovel, J. Lasky, E. Leobandung, H.-S. Lo, M. Maloney, D. Moy, Werner A. Rausch, D. Sadana, Dominic J. Schepis, M. Sherony, J. Sleight, Lawrence F. Wagner, K. Wu, Bijan Davari, T. Chen

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引用次数: 14

摘要

SOI上的部分耗尽深亚微米CMOS技术正在成为主流技术。与采用相同光刻技术的批量技术相比，该技术的性能提高了20-35%。本文阐述了SOI技术在器件、材料、工艺和电路等方面的主流化所面临的挑战。

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Mainstreaming of the SOI technology

Partially-depleted deep sub-micron CMOS on SOI technology is becoming a mainstream technology. This technology offers 20-35% performance gain over a bulk technology implemented with the same lithography. In this paper, the challenges of mainstreaming the SOI technology in device, material, technology and circuit terms are described.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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