PD SOI nMOS中交流浮体效应的温度依赖性

Y. Tseng, W.M. Huang, C. Hwang, P. Welch, J. Woo
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引用次数: 5

摘要

交流浮体效应显著影响了SOI模拟电路的性能,例如由于输出电导(G/sub DS/)的扭转而导致线性度下降(Tseng et al., 1998),以及由于低频(LF)噪声超调而导致的更高相位噪声(Tseng et al., 1998)。对于部分耗尽(PD) SOI mosfet尤其如此。最近CMOS在单芯片上的高密度集成增加了功耗密度,导致工作温度升高。只有少数几篇论文讨论了高温运行对SOI模拟应用的影响(Dessard等人,1998;Eggermont et al., 1996)。在本研究中,交流浮体效应在较宽的温度范围内(从218 K到423 K)进行了探索。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature dependence of AC floating body effects in PD SOI nMOS
AC floating body effects have significantly impacted SOI analog circuit performance, such as degraded linearity due to the kink on output conductance (G/sub DS/) (Tseng et al., 1998) and higher phase noise due to low-frequency (LF) noise overshoot (Tseng et al., 1998). This is especially true for partially-depleted (PD) SOI MOSFETs. Recent high density integration of CMOS on a single chip increases the power dissipation density, resulting in an increased operating temperature. Only a few papers address the influence of high temperature operation for SOI analog applications (Dessard et al., 1998; Eggermont et al., 1996). In this study, AC floating body effects are explored in a wide temperature range (from 218 K to 423 K).
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