亚微米BICMOS兼容高压MOS晶体管

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583776

Y. Li, C. Salama, M. Seufert, M. King

{"title":"亚微米BICMOS兼容高压MOS晶体管","authors":"Y. Li, C. Salama, M. Seufert, M. King","doi":"10.1109/ISPSD.1994.583776","DOIUrl":null,"url":null,"abstract":"The design and implementation of high-voltage MOS transistors fully compatible with 0.8 /spl mu/m BICMOS technology is considered in this paper. Two-dimensional simulations were used in the design of the structures. Three different structures are presented. The results indicate that it is possible to implement MOS devices with a pitch of 8 /spl mu/m, breakdown voltage of the order of 20 to 50 V and specific on-resistance of the order of 0.8 to 10 m/spl Omega/ cm/sup 2/ by minor layout modifications and without changes in the process itself.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Submicron BICMOS compatible high voltage MOS transistors\",\"authors\":\"Y. Li, C. Salama, M. Seufert, M. King\",\"doi\":\"10.1109/ISPSD.1994.583776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and implementation of high-voltage MOS transistors fully compatible with 0.8 /spl mu/m BICMOS technology is considered in this paper. Two-dimensional simulations were used in the design of the structures. Three different structures are presented. The results indicate that it is possible to implement MOS devices with a pitch of 8 /spl mu/m, breakdown voltage of the order of 20 to 50 V and specific on-resistance of the order of 0.8 to 10 m/spl Omega/ cm/sup 2/ by minor layout modifications and without changes in the process itself.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583776\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

本文研究了完全兼容0.8 /spl mu/m BICMOS技术的高压MOS晶体管的设计与实现。结构设计采用二维模拟。提出了三种不同的结构。结果表明，在不改变工艺本身的情况下，通过微小的布局修改，可以实现间距为8 /spl mu/m，击穿电压为20 ~ 50 V，比导通电阻为0.8 ~ 10 m/spl Omega/ cm/sup 2/的MOS器件。

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Submicron BICMOS compatible high voltage MOS transistors

The design and implementation of high-voltage MOS transistors fully compatible with 0.8 /spl mu/m BICMOS technology is considered in this paper. Two-dimensional simulations were used in the design of the structures. Three different structures are presented. The results indicate that it is possible to implement MOS devices with a pitch of 8 /spl mu/m, breakdown voltage of the order of 20 to 50 V and specific on-resistance of the order of 0.8 to 10 m/spl Omega/ cm/sup 2/ by minor layout modifications and without changes in the process itself.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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