基于flash的非易失性可编程开关为低功耗高速FPGA通过相邻集成MONOS/逻辑和新颖的编程方案

K. Zaitsu, K. Tatsumura, M. Matsumoto, Masato Oda, S. Fujita, S. Yasuda
{"title":"基于flash的非易失性可编程开关为低功耗高速FPGA通过相邻集成MONOS/逻辑和新颖的编程方案","authors":"K. Zaitsu, K. Tatsumura, M. Matsumoto, Masato Oda, S. Fujita, S. Yasuda","doi":"10.1109/VLSIT.2014.6894355","DOIUrl":null,"url":null,"abstract":"Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CMOS logic is demonstrated. The MONOS transistors (MTrs.) and low-voltage switching transistors (SwTrs.) are fabricated close to each other without deteriorating each performance. Furthermore, memory programming scheme is optimized to realize selective writing with no damage in the SwTrs. MONOS-based configuration memory has a half area of conventional SRAM, and it can be placed in each block in FPGA. That enables efficient power gating (PG) that offers low-power FPGA operation.","PeriodicalId":105807,"journal":{"name":"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Flash-based nonvolatile programmable switch for low-power and high-speed FPGA by adjacent integration of MONOS/logic and novel programming scheme\",\"authors\":\"K. Zaitsu, K. Tatsumura, M. Matsumoto, Masato Oda, S. Fujita, S. Yasuda\",\"doi\":\"10.1109/VLSIT.2014.6894355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CMOS logic is demonstrated. The MONOS transistors (MTrs.) and low-voltage switching transistors (SwTrs.) are fabricated close to each other without deteriorating each performance. Furthermore, memory programming scheme is optimized to realize selective writing with no damage in the SwTrs. MONOS-based configuration memory has a half area of conventional SRAM, and it can be placed in each block in FPGA. That enables efficient power gating (PG) that offers low-power FPGA operation.\",\"PeriodicalId\":105807,\"journal\":{\"name\":\"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2014.6894355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2014.6894355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

介绍了一种用于低功耗和高速FPGA的新型非易失性可编程开关,该开关将MONOS闪存与CMOS逻辑相邻集成。MONOS晶体管(MTrs)和低压开关晶体管(SwTrs)彼此靠近而不影响各自的性能。在此基础上,对存储器编程方案进行了优化,实现了在不损坏存储器的情况下的选择性写入。基于monos的配置存储器的面积只有传统SRAM的一半,并且可以放置在FPGA的每个块中。这使得提供低功耗FPGA操作的高效功率门控(PG)成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flash-based nonvolatile programmable switch for low-power and high-speed FPGA by adjacent integration of MONOS/logic and novel programming scheme
Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CMOS logic is demonstrated. The MONOS transistors (MTrs.) and low-voltage switching transistors (SwTrs.) are fabricated close to each other without deteriorating each performance. Furthermore, memory programming scheme is optimized to realize selective writing with no damage in the SwTrs. MONOS-based configuration memory has a half area of conventional SRAM, and it can be placed in each block in FPGA. That enables efficient power gating (PG) that offers low-power FPGA operation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
3.40
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信