用于多gb源侧注入MLC NOR闪存的高精度高压整形器

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541636

H. Tran, William John Saiki, J. Frayer, Thuan Vu, A. Ly, S. Nguyen, Hung Quoc Nguyen, D. J. Lee, M. Briner

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摘要

在0.18/spl mu/m 64-256Meg NOR SSI闪存芯片上演示了一种高精度高压整形器，以验证1.8V多千兆比特(>4 Gbit)密度4bits/cell多电平存储器中/spl sim/8bit精度高压传输系统的可行性。本文首次提出了动态自适应高压偏置方案(DYAHV)和独特的嵌套阵列驱动回路。

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A precision high voltage wave-shaper for multi-Gbit source side injection MLC NOR flash memory

A precision high voltage wave-shaper is demonstrated in 0.18/spl mu/m 64-256Meg NOR SSI flash MLC memory chip to demonstrate feasibility of a /spl sim/8bit accuracy HV delivering system for 1.8V multi giga bit (>4 Gbit) density 4bits/cell multilevel memory. Dynamic adaptive HV bias scheme (DYAHV) and unique nested array driving loop shown for the first time in this work.

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Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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