智能功率SOI技术中高侧NDMOS的热载流子可靠性

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487961

F. Dietz, S. Schwantes, T. Stephan, V. Dudek

{"title":"智能功率SOI技术中高侧NDMOS的热载流子可靠性","authors":"F. Dietz, S. Schwantes, T. Stephan, V. Dudek","doi":"10.1109/ISPSD.2005.1487961","DOIUrl":null,"url":null,"abstract":"The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hot-carrier reliability of high side NDMOS in smart power SOI technologies\",\"authors\":\"F. Dietz, S. Schwantes, T. Stephan, V. Dudek\",\"doi\":\"10.1109/ISPSD.2005.1487961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1487961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

首次研究了堆叠电位对横向SOI-NDMOS晶体管热载流子(HC)可靠性和安全工作区域(SOA)的影响。测量和仿真结果表明，由于NDMOS器件晶圆背面的电位导致的断开状态击穿电压的降低并不一定意味着HC可靠性的降低，而电气SOA可以降低。

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Hot-carrier reliability of high side NDMOS in smart power SOI technologies

The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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