掺铟梯度沟道MOSFET红外介质区(1.5 μm - 6.0 μm)探测器

International Conference on Instrumentation, Communication, Information Technology, and Biomedical Engineering 2009 Pub Date : 2009-11-01 DOI:10.1109/ICICI-BME.2009.5417265

Hartono Siswono

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摘要

采用GCMOSFET器件作为红外介质区(1.5 μm - 6.0 μm)探测器。这可以通过在GCMOSFET器件中使用铟作为掺杂剂来实现。GCMOSFET的驱动电流明显高于MOSFET:因此，GCMOSFET需要更低的功耗。这是因为GCMOSFET的有效沟道长度比MOSFET短。

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Indium doped graded channel MOSFET IR medium region (1.5 μm–6.0 μm) detector

The GCMOSFET device is used as IR medium region (1.5 μm–6.0 μm) detector. This can be done by using Indium as dopant in the GCMOSFET device. GCMOSFET gives significantly higher drive current than MOSFET: therefore, GCMOSFET needs lower power consumption. This can be achieved because GCMOSFET has shorter effective channel length than MOSFET.

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International Conference on Instrumentation, Communication, Information Technology, and Biomedical Engineering 2009

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