HK PMOS TDDB的非威布尔分布研究

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10102956

Jeong-hwan Hwang, Yong Gon Lee, Sang Ho Lee, Sung Kye Park

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引用次数: 0

摘要

在DRAM制造中，HfO2/HfSiOx的HK介电堆被用作传统氧化硅介电体的高速替代品。栅极电介质的可靠性是主要问题之一。特别是在PMOS TDDB中观察到非威布尔分布。这种异常行为归因于HKMG双层结构和Tinv变化的影响。最后，我们对这种异常病例提出了精确的终生提取方法。

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A Study of the non-Weibull distribution of HK PMOS TDDB

In DRAM manufacturing, HK dielectric stacks with HfO2/HfSiOx are being used as a replacement for conventional silicon oxide dielectrics for high speed. One of the major problems is reliability of gate dielectric. Especially, non-Weibull distribution in PMOS TDDB has been observed. This abnormal behavior has been attributed to the effect of HKMG bi-layer structure and the Tinv variation. Finally, we suggest precise method for lifetime extraction in this abnormal case.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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