一种基于硅片的细胞高度平行电穿孔系统

Frank Kupfer, S. Lattanzio, M. Maschietto, András Botos, M. Mahnkopf, Jurgen Bruns, M. Schreiter, S. Vassanelli, R. Thewes
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引用次数: 1

摘要

提出了一种单细胞电穿孔系统,能够高效、高度平行、无创地转染生物细胞,以满足克隆实验的需要。硅片的二维几何结构和表面培养的细胞使实验具有良好的可控性和可及性,使用标准的显微镜监测方法。基于改进的绝缘体上硅(SOI)技术,采用192个电穿孔位点对芯片进行加工。组装的芯片在一个允许应用多种电气协议的设置中操作。细胞培养实验的初步结果证明了这种方法的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Si-chip-based system for highly parallel electroporation of cells
A single-cell electroporation system is presented capable for efficient, highly parallel, and noninvasive transfection of biological cells as required in cloning experiments. The 2D geometry of Si-chips with cells cultivated on their surface enables good controllability and accessibility of the experiment using standard microscopic monitoring methods. On the basis of a modified silicon-on-insulator (SOI) technology chips are processed with 192 electroporation sites. The assembled chips are operated in a setup which allows application of a large variety of electrical protocols. First results from cell culture experiments prove feasibility.
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