在亚太赫兹范围内的片上TRL校准中完成表征设置的重要性

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2018-03-19 DOI:10.1109/ICMTS.2018.8383798

C. Yadav, M. Deng, M. De matos, S. Frégonèse, T. Zimmer

{"title":"在亚太赫兹范围内的片上TRL校准中完成表征设置的重要性","authors":"C. Yadav, M. Deng, M. De matos, S. Frégonèse, T. Zimmer","doi":"10.1109/ICMTS.2018.8383798","DOIUrl":null,"url":null,"abstract":"In this paper, we present the effect of different sub-mm and mm-wave probe geometry and topology on the measurement results of dedicated test-structures calibrated with on-wafer TRL. These results are compared against 3D EM simulation of the intrinsic test-structures. To analyze difference between the measured and intrinsic EM simulation results, on-wafer TRL calibration performed on EM simulation results of a dedicated test-structure is also presented.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range\",\"authors\":\"C. Yadav, M. Deng, M. De matos, S. Frégonèse, T. Zimmer\",\"doi\":\"10.1109/ICMTS.2018.8383798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present the effect of different sub-mm and mm-wave probe geometry and topology on the measurement results of dedicated test-structures calibrated with on-wafer TRL. These results are compared against 3D EM simulation of the intrinsic test-structures. To analyze difference between the measured and intrinsic EM simulation results, on-wafer TRL calibration performed on EM simulation results of a dedicated test-structure is also presented.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在本文中，我们介绍了不同的亚毫米和毫米波探头几何形状和拓扑结构对专用测试结构的测量结果的影响。这些结果与三维电磁模拟的内在测试结构进行了比较。为了分析测量结果与固有电磁仿真结果之间的差异，还对专用测试结构的电磁仿真结果进行了片上TRL校准。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

In this paper, we present the effect of different sub-mm and mm-wave probe geometry and topology on the measurement results of dedicated test-structures calibrated with on-wafer TRL. These results are compared against 3D EM simulation of the intrinsic test-structures. To analyze difference between the measured and intrinsic EM simulation results, on-wafer TRL calibration performed on EM simulation results of a dedicated test-structure is also presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)

自引率

0.00%

发文量