{"title":"一种用于W-CDMA的65nm CMOS堆叠折叠全差分(SFFD) PA结构","authors":"Y. Luque, N. Deltimple, E. Kerhervé, D. Belot","doi":"10.1109/ICECS.2008.4674815","DOIUrl":null,"url":null,"abstract":"This paper presents a 65 nm CMOS-power amplifier (PA) designed for mobile communications.The PA is based on a new structure, the stacked folded fully differential (SFFD) which is inspired by a push-pull structure. The PA is designed for the UMTS W-CDMA standard which requires linearity from -20 dBm to 24 dBm output power. The power amplifier provides 31 dBm output power with 26% of power added efficiency (PAE) at 1.95 GHz. The linear gain is 20 dB and the compression point (OCP1) is 25.6 dBm. In order to meet the UMTS W-CDMA requirements, the PA is linear until 24 dBm, which is the maximum output power required by this standard.","PeriodicalId":404629,"journal":{"name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 65 nm CMOS - Stacked Folded Fully Differential (SFFD) PA structure for W-CDMA application\",\"authors\":\"Y. Luque, N. Deltimple, E. Kerhervé, D. Belot\",\"doi\":\"10.1109/ICECS.2008.4674815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 65 nm CMOS-power amplifier (PA) designed for mobile communications.The PA is based on a new structure, the stacked folded fully differential (SFFD) which is inspired by a push-pull structure. The PA is designed for the UMTS W-CDMA standard which requires linearity from -20 dBm to 24 dBm output power. The power amplifier provides 31 dBm output power with 26% of power added efficiency (PAE) at 1.95 GHz. The linear gain is 20 dB and the compression point (OCP1) is 25.6 dBm. In order to meet the UMTS W-CDMA requirements, the PA is linear until 24 dBm, which is the maximum output power required by this standard.\",\"PeriodicalId\":404629,\"journal\":{\"name\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2008.4674815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2008.4674815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 65 nm CMOS - Stacked Folded Fully Differential (SFFD) PA structure for W-CDMA application
This paper presents a 65 nm CMOS-power amplifier (PA) designed for mobile communications.The PA is based on a new structure, the stacked folded fully differential (SFFD) which is inspired by a push-pull structure. The PA is designed for the UMTS W-CDMA standard which requires linearity from -20 dBm to 24 dBm output power. The power amplifier provides 31 dBm output power with 26% of power added efficiency (PAE) at 1.95 GHz. The linear gain is 20 dB and the compression point (OCP1) is 25.6 dBm. In order to meet the UMTS W-CDMA requirements, the PA is linear until 24 dBm, which is the maximum output power required by this standard.
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