一种用于电子收费系统的5.8 GHz CMOS低噪声放大器

Siheng Zhu, Chao Guo, Kun Feng, Jingjing Zou, Houjun Sun, X. Lv
{"title":"一种用于电子收费系统的5.8 GHz CMOS低噪声放大器","authors":"Siheng Zhu, Chao Guo, Kun Feng, Jingjing Zou, Houjun Sun, X. Lv","doi":"10.1109/ICMMT.2012.6229963","DOIUrl":null,"url":null,"abstract":"This paper presents a 5.8 GHz low noise amplifier (LNA) for electronic toll collection system (ETCS). Traditional design strategy of source inductor feedback amplifier (L-CSLNA) ignores the influence of off chip matching, such as print circuit broad (PCB), bonding wire and passive chip parts which greatly affect the performance of LNA at high frequency. In this paper we adopt 3D electromagnetic simulation to analyze the impacts of off chip components to the design of LNA. The proposed LNA has been fabricated in 0.18 μm CMOS process. The measured S11 of the proposed LNA is less than -10 dBm from 5.7 to 5.9 GHz, the minimal noise figure (NF) is 2 dB, the maximal power gain is 12.7 dB and the IIP3 is -4 dBm with 16 mW power dissipation.","PeriodicalId":421574,"journal":{"name":"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 5.8 GHz CMOS low noise amplifier for electronic toll collection system\",\"authors\":\"Siheng Zhu, Chao Guo, Kun Feng, Jingjing Zou, Houjun Sun, X. Lv\",\"doi\":\"10.1109/ICMMT.2012.6229963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 5.8 GHz low noise amplifier (LNA) for electronic toll collection system (ETCS). Traditional design strategy of source inductor feedback amplifier (L-CSLNA) ignores the influence of off chip matching, such as print circuit broad (PCB), bonding wire and passive chip parts which greatly affect the performance of LNA at high frequency. In this paper we adopt 3D electromagnetic simulation to analyze the impacts of off chip components to the design of LNA. The proposed LNA has been fabricated in 0.18 μm CMOS process. The measured S11 of the proposed LNA is less than -10 dBm from 5.7 to 5.9 GHz, the minimal noise figure (NF) is 2 dB, the maximal power gain is 12.7 dB and the IIP3 is -4 dBm with 16 mW power dissipation.\",\"PeriodicalId\":421574,\"journal\":{\"name\":\"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2012.6229963\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2012.6229963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

提出了一种用于电子收费系统(ETCS)的5.8 GHz低噪声放大器。传统的源电感反馈放大器(L-CSLNA)设计策略忽略了片外匹配的影响,如印刷电路板(PCB)、键合线和无源芯片部件等,这些因素对源电感反馈放大器的高频性能影响很大。本文采用三维电磁仿真的方法分析了片外元件对LNA设计的影响。采用0.18 μm CMOS工艺制备了LNA。在5.7 ~ 5.9 GHz范围内,LNA的S11值小于-10 dBm,最小噪声系数(NF)为2 dB,最大功率增益为12.7 dB, IIP3值为-4 dBm,功耗为16 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5.8 GHz CMOS low noise amplifier for electronic toll collection system
This paper presents a 5.8 GHz low noise amplifier (LNA) for electronic toll collection system (ETCS). Traditional design strategy of source inductor feedback amplifier (L-CSLNA) ignores the influence of off chip matching, such as print circuit broad (PCB), bonding wire and passive chip parts which greatly affect the performance of LNA at high frequency. In this paper we adopt 3D electromagnetic simulation to analyze the impacts of off chip components to the design of LNA. The proposed LNA has been fabricated in 0.18 μm CMOS process. The measured S11 of the proposed LNA is less than -10 dBm from 5.7 to 5.9 GHz, the minimal noise figure (NF) is 2 dB, the maximal power gain is 12.7 dB and the IIP3 is -4 dBm with 16 mW power dissipation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信