正入射量子阱红外光电探测器

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785970

Chien-Ping Lee, Shiang-Yu Wang

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引用次数: 1

摘要

利用高掺杂InGaAs量子阱，制备了具有大入射响应的无光栅双色量子阱红外探测器。这些器件具有与具有表面光栅的传统qwip相当的性能，但没有光栅的复杂性。高应变InGaAs量子阱和高掺杂浓度的阱增强了TE的吸收。双色qwip也表现出优异的性能。

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Normal incident quantum well infrared photodetectors

By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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