SiGe HBTs中Kirk效应诱导的热阻偏置依赖性

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.25

Hao Jiang, Jieyin Zheng, M. Recanelli

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引用次数: 0

摘要

当偏置电流增加时，用于高功率应用的SiGe HBTs的热阻显着降低。这一现象首次通过测量和模拟来解释。

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Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs

The thermal resistance of SiGe HBTs for high power applications reduces significantly when the bias current increases. This phenomenon is explained by both measurements and simulations for the first time.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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