Ti缓冲层对hfox基双极和互补电阻开关的影响

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480495

S. Z. Rahaman, Yu-De Lin, P. Gu, Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, K. Tsai, Weisu Chen, Chien-Hua Hsu, Po-tsung Tu, Frederick T. Chen, M. Tsai, T. Ku, Pei-Hua Wang

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引用次数: 2

摘要

本文研究了基于Ti厚度调制的简单策略来调节HfOx薄膜中的氧空位浓度，并实现了HfOx薄膜的电阻开关特性。因此，我们展示了一种控制形成电压的方法，将工作电流降低到亚μ a水平，可控制BRS/CRS，并绕过基于Ti/HfOx的1T1R RRAM器件中的自CRS现象，用于未来的存储应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications

This paper investigates the Ti thickness modulation based simple strategy to regulate the oxygen vacancy concentration in the HfOx film and implemented to realize the resistive switching properties. Accordingly, we demonstrated a way to control the forming voltage, decrease the operation current to sub-μA level, controllable BRS/CRS and to bypass the self-CRS phenomena in Ti/HfOx based 1T1R RRAM devices for future memory applications.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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