U. Arz, Dylan F. Williams, D. Walker, H. Grabinski
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High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers
In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 ¿m CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
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