一个百万周期CMOS 256K EEPROM

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157155

D. Cioaca, Tien Lin, A. Chan, L. Chen, A. Mihnea

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引用次数: 3

摘要

本文将讨论一种使用1.25μm双聚CMOS材料制成的具有100万次循环寿命和150ns读存取时间的器件。电路模式包括字节写入和页写入，并具有持久选择的手段。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A million-cycle CMOS 256K EEPROM

This paper will discuss a device with an endurance of 1-million cycles and a read access time of 150ns, fabricated in 1.25μm double poly CMOS. Circuit modes include byte write and page write, with means of endurance selection.

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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