CMOS的技术水平和未来潜力

2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI:10.1109/NMDC.2006.4388864

Y. Nishi

{"title":"CMOS的技术水平和未来潜力","authors":"Y. Nishi","doi":"10.1109/NMDC.2006.4388864","DOIUrl":null,"url":null,"abstract":"The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS state of the arts and future potential\",\"authors\":\"Y. Nishi\",\"doi\":\"10.1109/NMDC.2006.4388864\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.\",\"PeriodicalId\":200163,\"journal\":{\"name\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2006.4388864\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

综述了CMOS缩放技术迄今在改善驱动电流和抑制MOSFET断流方面取得的进展，介绍了沟道、栅绝缘体和栅电极的新结构、新材料。从集成电子学的角度讨论了各种革命性纳米电子器件的未来潜力，如纳米线/纳米管和基于非易失性存储器的新材料。

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CMOS state of the arts and future potential

The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.

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2006 IEEE Nanotechnology Materials and Devices Conference

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