iN14技术中n- finfet晶体管的总电离剂量效应

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Pub Date : 2021-07-01 DOI:10.1109/NSREC45046.2021.9679337

L. Artola, T. Chiarella, T. Nuns, G. Cussac, J. Mitard

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引用次数: 1

摘要

本文介绍了IMEC开发的iN14技术在γ辐照下的TID评价。讨论了不同栅极长度下的栅极效应晶体管的电特性和晶体管间可变性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology

This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths.

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2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

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