N. I. Beletsky, A. Mishnyov, N. Polyansky, E. Prokhorov, A. Semenov
{"title":"GaAs mds结构的频率机会","authors":"N. I. Beletsky, A. Mishnyov, N. Polyansky, E. Prokhorov, A. Semenov","doi":"10.1109/CRMICO.2000.1256168","DOIUrl":null,"url":null,"abstract":"MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.","PeriodicalId":387003,"journal":{"name":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Frequency opportunities of GaAs MDS-structures\",\"authors\":\"N. I. Beletsky, A. Mishnyov, N. Polyansky, E. Prokhorov, A. Semenov\",\"doi\":\"10.1109/CRMICO.2000.1256168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.\",\"PeriodicalId\":387003,\"journal\":{\"name\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2000.1256168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2000.1256168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.