动态低功耗超级栅极设计中逻辑功耗晶体管尺寸的校准

Henrique Kessler, Murilo Bohlke, L. Rosa, M. Porto, V. Camargo
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引用次数: 0

摘要

在VLSI设计中,栅极尺寸被广泛研究以改善功耗和性能特性。最近的发展允许静态CMOS复杂门的自动设计,以降低功耗。在使用最小晶体管尺寸或逻辑努力技术的这些作品中,可以观察到缺乏不同的晶体管尺寸。在这项工作中,我们提出了一种使逻辑努力技术适应低功耗应用的方法。结果表明,在45nm CMOS技术的多个仿真环境中,功耗性能权衡的研究案例中有99.9%的显着改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calibration of Logical Effort Transistor Sizing for On-the-Fly Low-Power Supergate Design
Gate sizing has been widely studied to improve power dissipation and performance characteristics in VLSI design. Recent developments allow the automatic design of static CMOS complex gates for a reduction in power dissipation. It is possible to observe a lack of different transistor sizing in these works using minimum transistor dimension or the Logical Effort technique. In this work, we propose a methodology to adapt the Logical Effort technique for low-power applications. Results show significant improvements on up to 99.9% of the studied cases in power-performance trade-off across multiple simulation environments for a 45nm CMOS technology.
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