卫星通信用GaN HEMT e类功率放大器的设计

Jingyuan Wang, Hongxi Yu, Fei Yang
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引用次数: 3

摘要

提出了一种基于2.2GHz工作频率的GaN HEMT器件的微带线e类功率放大器的设计方案。通过对漏极偏置电路进行局部谐波抑制和电感效应增强,实现了理想的漏极电压电流波形和高效率。综合仿真结果表明,该系统PAE为74.8%,功率增益为15.1dB,输出功率为41.16dBm,输入功率为26dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of GaN HEMT Class-E Power Amplifier for Satellite Communication
This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.
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