新注入-光伏效应基础

K. Aripov, K. Bustanov, F. R. Nasirkhodjaev, E. V. Ob’edkov
{"title":"新注入-光伏效应基础","authors":"K. Aripov, K. Bustanov, F. R. Nasirkhodjaev, E. V. Ob’edkov","doi":"10.1109/CANET.2006.279269","DOIUrl":null,"url":null,"abstract":"A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.","PeriodicalId":382941,"journal":{"name":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New Injection-Voltaic Effect Elementary Basis\",\"authors\":\"K. Aripov, K. Bustanov, F. R. Nasirkhodjaev, E. V. Ob’edkov\",\"doi\":\"10.1109/CANET.2006.279269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.\",\"PeriodicalId\":382941,\"journal\":{\"name\":\"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CANET.2006.279269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CANET.2006.279269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种理想稳定电流发生器的电路。结果表明,在固定的SCG电流值和选定的集成电路生产工艺条件下,可以设计出使电路内阻趋于无穷大的SCG结构元件工艺。提出了一种互补双极晶体管逆变器(CBTI),它可以在低电源电压(双极晶体管p-n结接近接触电位差)下工作,并且具有低消耗电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New Injection-Voltaic Effect Elementary Basis
A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信